TOSHIBA GT30F123 New Stock

#GT30F123 TOSHIBA GT30F123 New • Insulated Gate Bipolar Transistor , GT30F123 pictures, GT30F123 price, #GT30F123 supplier
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https://www.slw-ele.com/gt30f123.html

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30F123/ GT30F123 IGBT. 
• Breakdown Voltage VCES (V) @Ta = 25˚C : 300V
• IGBT Current Rating IC (A) @Ta = 25˚C : 200A
• Insulated Gate Bipolar Transistor
• Case Style: TO220SIS/ Short Leads 
• Insulated Gate Bipolar Transistor